Tokyo Electron TEB207-12 OGSI EC80-000157-12 control module

Specific Parameters

Power Supply Parameters

Supply Voltage: DC 24V±5%

Rated Power Consumption: ≤15W (normal operation status)

Power Ripple: ≤10mV (peak-to-peak)

Power Isolation: 2000Vrms (for 1 minute continuously, power and signal terminals)

RF Control Parameters

Operating Frequency: 13.56MHz±0.1% (semiconductor process standard frequency band)

RF Power Range: 0-500W (adjustable)

Matching Accuracy: ≤0.1% reflection coefficient (full power range)

Matching Response Time: ≤100ms (when power change reaches 20% of rated value)

Gas Control Parameters

Number of Gas Control Channels: 4 independent channels

Single-Channel Flow Range: 0-500sccm (under standard conditions)

Flow Control Accuracy: ±1%FS (at 25℃, 1atm environment)

Gas Compatibility: Compatible with semiconductor process gases such as CF₄, SF₆, O₂, Ar, N₂

Environmental Parameters

Operating Temperature Range: 20-25℃±1℃ (cleanroom process environment)

Storage Temperature Range: -10-40℃

Relative Humidity: 30-50%±5% (non-condensing)

Cleanliness Class: Class 1 (compliant with ISO 14644-1 standard, no particle contamination)

EMC Immunity: Compliant with IEC 61000-6-3 EMC standard for semiconductor equipment

Physical Parameters

Mounting Type: Equipment embedded installation (compatible with TEL equipment standard mounting interface)

Dimensions (L×W×H): 180mm×120mm×60mm

Weight: Approximately 0.8kg

Connector Type: Hermetic quick connector (gas channel), high-frequency coaxial connector (RF signal)

Product Performance

High-Precision Process Control: RF matching accuracy ≤0.1% reflection coefficient, gas flow control accuracy ±1%FS, which can stably maintain the consistency of RF energy transmission efficiency and gas ratio during wafer processing, ensuring chip manufacturing process parameter deviation ≤0.5% and improving wafer yield to over 99.5%.
Fast Dynamic Response: RF matching response time ≤100ms, gas flow adjustment response time ≤50ms, which can real-time respond to parameter changes during wafer process switching and avoid wafer damage in the process transition stage.
High-Reliability Operation: Gas channels are made of corrosion-resistant materials (e.g., Hastelloy), RF components are gold-plated on the surface, and the module’s Mean Time Between Failures (MTBF) ≥50000 hours, meeting the 7×24-hour continuous production needs of semiconductor factories.
Strong Environmental Adaptability: It can operate for a long time in a Class 1 cleanroom environment, withstanding small fluctuations in temperature and humidity (±1℃/±5%RH) without parameter drift; the EMC design can resist electromagnetic interference from semiconductor equipment clusters, with a data transmission bit error rate ≤10⁻¹².
Intelligent Status Monitoring: Built-in temperature, pressure, and flow sensors to real-time collect module operation data, feedback abnormal status (e.g., gas leakage, RF mismatch) through the TEL equipment main control system, trigger sound-light alarm, and achieve component-level fault location accuracy.