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AMAT 0190-49518 High precision atomic layer deposition (ALD) process module

AMAT 0190-49518 belongs to a single wafer ALD system, whose core function is to achieve uniform deposition of atomic level thin films through self limiting surface chemical reactions (such as metal organic chemical vapor deposition, MOCVD). This module is usually integrated into the Centura or Endura platform and is used in scenarios such as 3D NAND stacking, logic chip high dielectric constant (High - κ) gates, power devices, etc. It supports process technologies of 3nm and below. Supports complex multilayer thin film structures (such as Al ₂ O ∝/TiO ₂ alternating stacking), suitable for emerging storage technologies such as MRAM and FeFET.

AMAT 0190-49518 High precision atomic layer deposition (ALD) process module

Technical Parameter
Sedimentary capacity
Material compatibility: Supports metal oxides such as Al ₂ O3, TiO ₂, HfO ₂, Ta ₂ O ₅, as well as metal nitrides such as TiN and W.
Thickness control: Single cycle growth thickness of 0.1-1 Å, uniformity error<1% (200mm wafer).
Process temperature: Room temperature to 500 ° C, supports low-temperature deposition (such as CMOS backend integration below 100 ° C).
Process efficiency
Capacity: Processing 50-100 wafers (200mm) per hour, supporting parallel processing of multiple batches.
Gas management: Pulse gas injection (N ₂ purge interval<50ms) is adopted, with precursor utilization rate>90%.
Interface and Control
Communication protocol: Supports SECS/GEM standards and can seamlessly integrate with factory MES systems.
Real time monitoring: Integrated in-situ ellipsometry to achieve real-time feedback on film thickness and composition.
Physical specifications
Size: 1.8m × 1.5m × 2.2m (including gas cabinet), weight approximately 2.5 tons.
Environmental requirements: Cleanroom Class 1, vibration<50 μ m, power supply 480V three-phase AC.

Product Performance
Conformance and uniformity
High aspect ratio coverage: Achieving atomic level conformal deposition in 3D NAND deep holes (aspect ratio>100:1) to ensure consistent interlayer electrical performance.
Repeatability between wafers: The thickness fluctuation between batches is less than 0.5%, meeting the requirements of large-scale production.
Process flexibility
Multi material stacking: supports complex multilayer thin film structures (such as Al ₂ O ∝/TiO ₂ alternating stacking), suitable for emerging storage technologies such as MRAM and FeFET.
Formula management: Built in 1000+process formula templates, supporting quick switching between different materials and thickness requirements.
Safety and reliability
Chemical handling: equipped with inert gas encapsulation and leak detection system to ensure the safe use of flammable/toxic precursors (such as TMA, WF ₆).
Maintenance design: The modular structure supports online replacement of 90% of components, with an average repair time (MTTR) of less than 30 minutes.




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