AMAT 0100-71141 K-type thermocouple input board

Specific parameters
Input type: K-type thermocouple (compliant with IEC 60584-2 standard)
Number of channels: 8 channels (expandable to 16 channels, requires external expansion module)
Measurement range: 200 ° C to+1372 ° C (covering the full range of K-type thermocouple operation)
Accuracy: ± 0.1 ° C (including cold end compensation error at 25 ° C)
Resolution: 0.01 ° C
Conversion rate: 100ms/channel (synchronous sampling mode)
Cold end compensation: Built in NTC thermistor, compensation accuracy ± 0.2 ° C
communication interface
-RS485 (Modbus RTU protocol, supports multi master slave architecture)
-Digital I/O (4-channel input/4-channel output, used for alarm triggering)
Anti interference capability: Conducted interference (CE) ≤ 30dB μ V/m, radiated interference (RE) ≤ 20dB μ V/m (compliant with CISPR 32 Class A)
work environment
-Temperature: -40 ° C to+85 ° C (wide temperature design)
-Humidity: 5% -95% RH (without condensation)
Mechanical specifications
Size: 100mm × 160mm (VME standard size);
Weight: Approximately 500g (including heat sink)

Product Performance: Dual Breakthrough in Accuracy and Reliability
Ultra wide dynamic measurement range
Supports full range measurement of K-type thermocouples, covering temperature requirements from low-temperature ion implantation (-100 ° C) to high-temperature annealing (+1200 ° C) in semiconductor processes. For example, in the high-temperature diffusion process of 3D NAND storage chips, this module can monitor the temperature difference between the edge and center of the wafer in real time, ensuring that the process uniformity deviation is less than ± 0.5 ° C.
Multi scenario compatibility design
Single ended input or differential input mode can be switched through software configuration to adapt to different sensor wiring requirements. For example, in ALD (Atomic Layer Deposition) process, differential mode can eliminate common mode noise introduced by long-distance wiring, ensuring temperature measurement error is less than ± 0.05 ° C.
Electromagnetic compatibility (EMC) optimization
Adopting a multi-layer PCB layout, power isolation, and shielding design, it can operate stably in strong electromagnetic interference (EMI) environments generated by plasma discharge. The measured data shows that under an electromagnetic field intensity of 100V/m, the temperature drift is less than ± 0.02 ° C/h.
Long lifecycle support
Key components such as ADC chips and NTC thermistors are selected at industrial grade, with an average time between failures (MTBF) of over 80000 hours. Support firmware upgrades to be compatible with new sensors, such as adapting high-precision thin-film thermocouples (response time<10ms) through software patches.

Application area: Temperature nerve endings in semiconductor manufacturing
(1) Ion implantation process monitoring
Function: Real time monitoring of wafer temperature, dynamic adjustment of injection dose and energy, to avoid uneven doping concentration caused by temperature fluctuations.
Technical details: Through the Modbus interface and linkage with the ion implantation machine control system, the process pause is automatically triggered when the temperature deviation exceeds ± 0.3 ° C, ensuring the consistency of the threshold voltage of the 3nm node FinFET device.
(2) Control of thin film deposition process
Function: Monitor the temperature gradient between magnetron sputtering targets and wafers, optimize the stress distribution of thin films (such as stress control in copper interconnect processes).
Case: In the ALD process of the AMAT Endura platform, this module collaborates with the MKS gas mass flowmeter to achieve precise synchronization of precursor adsorption temperature (± 0.1 ° C), ensuring uniformity of single atomic layer deposition.
(3) Temperature management of wafer heating table
Function: Provides closed-loop temperature control for electrostatic chuck (ESC), supporting rapid rise and fall of wafer temperature (rate>20 ° C/s).
Integrated solution: Connect PID controller (such as Eurotherm 3204) through digital I/O interface to achieve a temperature difference of less than ± 0.2 ° C between the edge and center of the wafer.
(4) Equipment status health monitoring
Function: Collect temperature data of auxiliary equipment such as vacuum pump units and RF power supplies, and predict potential faults (such as cooling system blockage) through built-in algorithms.
Data value: Historical temperature curves can be used to optimize equipment maintenance cycles, reducing unplanned downtime by more than 25%.