AMAT 0010-44213 Temperature monitoring module

Specific parameters
Measurement range: 500-1500 ℃ (suitable for high-temperature etching or annealing processes).
Probe specification: 2mm diameter probe, suitable for precision measurement requirements of 300mm wafers.
Output signal: 4-20mA or 0-10V standardized signal, supporting long-distance transmission and closed-loop control.
Environmental compatibility: High vacuum (HV)/ultra-high vacuum (UHV) environment, protection level up to IP65, suitable for clean room environment.
Interface type: aviation plug or customized interface, compatible with AMAT Centura, Endura and other equipment platforms.

Product Performance
High precision temperature monitoring:
By using non-contact infrared measurement technology, real-time temperature fluctuations on the wafer surface can be captured with an accuracy error controlled within ± 1%.
Support multi zone temperature mapping to help optimize process uniformity (such as consistent etching rate).
Extreme environmental adaptability:
The stainless steel or aluminum alloy shell design is corrosion-resistant and resistant to electromagnetic interference, and can work stably for a long time in high temperature (>1000 ℃) and high-energy plasma environments.
Compatible with high vacuum environments, meeting the sealing requirements of semiconductor equipment, and avoiding gas leakage that affects measurement accuracy
Digital integration capability:
Support seamless integration with AMAT equipment’s PLC, MFC (Mass Flow Controller), and temperature control system to achieve real-time adjustment of process parameters.
Built in signal amplification module reduces transmission loss and ensures data reliability.

application area
Semiconductor manufacturing:
Etching process: In the Centura ACP etching equipment, monitor the temperature distribution inside the plasma chamber to ensure the uniformity of etching the dielectric or metal layer.
Thin film deposition: In conjunction with CVD (chemical vapor deposition) or PVD (physical vapor deposition) equipment, the wafer surface temperature is controlled to optimize the quality of thin film growth.
Annealing and Heat Treatment: Used for rapid heat treatment (RTP) systems to verify temperature consistency during wafer annealing and reduce defect rates.
Advanced packaging and 3D NAND manufacturing:
In the etching or cleaning process of 3D structures (such as through silicon via TSV), monitor local high-temperature areas to ensure process stability.