AMAT 0010-23716 High precision high-temperature measurement

Specific parameters
Temperature range: 500-1500 ℃ (covering the typical process window of RTP system)
Measurement accuracy: ± 0.5% (calibrated), meeting the stringent requirements of advanced processes for temperature uniformity
Output signal: 4-20mA analog or 0-10V digital signal, supporting SECS/GEM protocol for interaction with the host system
Physical characteristics:
Shell material: 316 stainless steel (IP65 protection level), corrosion-resistant, cleanroom compatible design
Interface type: aviation plug (compliant with AMAT chamber standards), supporting high vacuum (HV)/ultra-high vacuum (UHV) environments
Electrical specifications: 115V/230V AC dual voltage input, power consumption<50W

Product Performance
Precision sensing technology:
By using spectral analysis algorithms, the emissivity differences of different materials on the wafer surface can be distinguished, ensuring the temperature measurement accuracy of complex structures such as polycrystalline silicon and metal layers
Response time<200ms, supports microsecond level dynamic temperature fluctuation capture
Industrial grade reliability:
After more than 1000 hours of high-temperature aging testing, the drift rate is less than 0.1% per month when operating continuously at 1200 ℃
Built in self diagnostic function, can detect sensor disconnection, signal attenuation and other faults and trigger alarms
System integration capability:
Support linkage control with MFC (Mass Flow Controller) and PLC to optimize the dynamic matching of gas flow rate and temperature
Compatible with AMAT’s E30 GEM standard, data exchange with factory MES system can be achieved through HSMS protocol

application area
Semiconductor manufacturing:
Logic chip: used for key processes such as FinFET gate oxidation (1000-1200 ℃) and metal interconnect layer annealing (500-800 ℃)
Storage chip: Temperature closed-loop control for 3D NAND stack interlayer dielectric deposition (600-900 ℃) and charge trap layer activation (850-1100 ℃)
Advanced packaging:
System in Package (SiP): Used for local temperature monitoring of copper column reflow soldering (250-350 ℃) and bottom filling adhesive curing (150-200 ℃)
Emerging technologies:
Power Semiconductor: Edge Temperature Compensation Control for Silicon Carbide (SiC) Epitaxial Layer Growth (1500-1700 ℃)
Optoelectronic Devices: Uniformity Optimization of Gallium Nitride (GaN) Quantum Well Annealing (800-1000 ℃)